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Kingston KVR16n11/8 8GB DDR3 Memory

3,200.00

Kingston KVR16n11/8 8GB DDR3 Memory

3,200.00

  • JEDEC standard 1.5V Power Supply
  • VDDQ = 1.5V
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal banks
  • Programmable CAS latency: 11, 10, 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
  • Bi-directional Differential Data Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
  • Asynchronous Reset
  • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

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Additional information

Weight .1 kg

Technical Specifications

CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin) 260ns(min.)
Row Active Time (tRASmin) 35ns(min.)
UL Rating 94 V 0
Operating Temperature 0° C to +85 C
Storage Temperature -55°Cto+100°C

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